Table 1. Performance comparison between ER-CZ-1818 chip and world famous products *The package test method adopts the packaging test method of the world-renowned similar products: gold-plated TO39 bracket, bare core package test, and the test adopts 0.3 m integrating sphere in Hangzhou.
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The product has been tested by the National Electric Light Source Quality Supervision and Inspection Center (Shanghai) and will be introduced to the market this quarter. In the third quarter, the company will gradually introduce high-power vertical structure products such as 1W and 2W according to market demand. The launch of this product further reflects the powerful research and innovation capabilities of Yingrui Optoelectronics technology R&D team.
The vertical structure LED product adopts the wafer bonding technology process to transfer the epitaxial structure grown on the non-conductive and non-thermally conductive substrate to the substrate with excellent heat conduction and conductivity, and then the epitaxial structure and the growth substrate are processed by the lift-off technology. Stripping, the heat dissipation problem of the LED device is solved, the photoelectric performance and reliability of the device are improved, and the vertical structure LED can be driven at a higher current density, thereby achieving a substantial increase in the luminous intensity per unit area of ​​the chip, greatly reducing the product's Production and use costs.
The advantages of Yingrui Optoelectronics ER-CZ-1818 series vertical structure LED are as follows: First, under the same driving current density condition, compared with the LED chip, the vertical structure LED chip luminous efficiency is greatly improved. As shown in the test data of Figure 2, the vertical chip ER-CZ-1818 has a luminous efficiency 15% higher than that of the formal ER-ZZ-0920.
Second, vertical structure LEDs can employ greater drive current densities. For example, the maximum drive current density of ER-ZZ-0920 is 0.5A/mm^2, while the maximum drive current density of ER-CZ-1818 is 1.0 A/mm^2. At a large current density of 1 A/mm^2, an ER-CZ-1818 can replace 3-4 even if it maintains the same efficacy as ER-ZZ-0920 at a current density of 0.5 A/mm^2. ER-ZZ-0920, and its chip area is only 1.8 times that of ER-ZZ-0920, which reflects the added value of Yingrui photoelectric vertical structure LED chip.
Third, the vertical structure chip has relatively strong axial light, and only one wire needs to be used for packaging, which is more suitable for COB packaging and application.
The comprehensive performance of Yingrui Optoelectronics vertical structure ER-CZ-1818 is comparable to that of the world-renowned similar products, and it is superior to the world-renowned similar products in terms of voltage, leakage and light efficiency (see Table 1.). In addition, ER-CZ-1818 adopts sapphire substrate stripping technology, and the sapphire substrate after stripping can be recycled, which reduces the manufacturing cost of the chip process and has obvious advantages in cost performance. The ER-CZ-1818 chip of Yingrui Optoelectronics' vertical structure will be put on the market in the third quarter of 2014. Samples can be sent to the client for verification. Welcome cooperation! 
Figure 2. Performance comparison between ER-CZ-1818 chip and ER-ZZ-0920 chip 
**This technical parameter is selected from the world-class specifications of similar products. 
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Yingrui Optoelectronics Introduces Vertical Structure Chips in the High-end Field
Following the launch of the flip-chip structure chip by Yingrui Optoelectronics Technology Team in May 2014, the ER-CZ series of high-quality vertical structure LED chips were officially launched on June 30, 2014. The current trial production product is ER-CZ-1818 (such as Figure 1 shows a drive current of 150 mA and a power of 0.5 W, which is a medium power device.