Japan developed a new type of phosphor to increase particle size and increase luminous intensity

Niigata University of Japan has developed a phosphor manufacturing process with a luminous intensity of 2.6 times that of the original. According to the university, this process is expected to significantly increase the luminous efficiency of LEDs and the like. The news was published at the pre-conference press conference organized by the Japan Society of Applied Physics before the "2010 Autumn 71st Applied Physics Society Academic Lecture" held at Nagasaki University on September 14-17, 2010. The serial number of Niigata University’s speech at the Institute is 14a-ZM-7.

The phosphor is a Ba2SiO4:Eu2+ material that emits green light having a wavelength of more than 500 nm when irradiated with ultraviolet light. According to Niigata University, although the composition is a common phosphor, the particle size has reached tens of μm, which is about 10 times that of the original 3.5μm. By increasing the particle size to increase the length of the optical path through the particles, the efficiency of absorbing light by the particles is increased to more than 30%. Previously, light that was not absorbed by the phosphor was attenuated and lost during repeated light reflections between the phosphor particles. This time, this loss has been greatly reduced.

Japan develops new phosphors, which will greatly improve LED luminous efficiency

Compared with Ba2SiO4:Eu2+, which has a smaller particle size, the luminescence intensity when irradiated with the same ultraviolet ray is increased to 2.6 times that of the latter.

The researcher of the increase in particle size is "applicable to most LED phosphors containing Si components". Moreover, "although the final effect depends on the design of the LED, it is expected to increase the current luminous efficiency of the LED (about 90 lm/W) by more than 1.5 times."

This phosphor production method is one of the gas phase methods. Specifically, a mixture of solid powders such as BaCO3 and Eu is prepared, and the mixture is reacted with SiO gas heated to 1500 ° C or higher in an atmosphere of reducing agents H 2 and Ar.

Previously, when the phosphor raw material was subjected to high-temperature treatment for increasing the particle diameter, the raw material of the phosphor was melted into a glass. This time, the problem of the prior art has been solved by directly reacting the Si-containing material in a gaseous state. "Other synthesis methods are also examples in which N2 is used without using Ar, but there is a problem that impurities such as SiN are generated."

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